HIGH-GAIN LOW-NOISE GAALAS-GAAS PHOTOTRANSISTORSSCAVENNEC A; ANKRI D; BESOMBES C et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 394-395; BIBL. 11 REF.Article

DETERMINATION OF MINORITY CARRIER LIFETIME AND EFFECTIVE BACK SURFACE RECOMBINATION VELOCITY IN BSF SILICON SOLAR CELLS FROM TRANSIENT MEASUREMENTSJAIN SC; AGARWAL SK; RAY UC et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 365-367; BIBL. 11 REF.Article

P-GAAS/P-GA_1-XAL_XAS ISOTYPE HETEROJUNCTIONS IN DOUBLE HETEROSTRUCTURE LASER MATERIALHAKKI BW.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6054-6058; BIBL. 28 REF.Article

(GAAL)AS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS WITH GRADED COMPOSITION IN THE BASEMILLER DL; ASBECK PM; ANDERSON RJ et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 367-368; BIBL. 7 REF.Article

ELECTRONIC PROPERTIES OF FLAT-BAND SEMICONDUCTEUR HETEROSTRUCTURESWHITE SR; SHAM LJ.1981; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1981; VOL. 47; NO 12; PP. 879-882; BIBL. 18 REF.Article

GAIN SUPPRESSION IN GAAS/ALGAAS TJS LASERSKAWANISHI H; PETERSEN PE.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 6; PP. 823-824; BIBL. 8 REF.Article

IR-RED GAAS-ALAS SUPERLATTICE LASER MONOLITHICALLY INTEGRATED IN A YELLOW-GAP CAVITYHOLONYAK N JR; LAIDIG WD; CAMRAS MD et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 1; PP. 102-104; BIBL. 11 REF.Article

CHARACTERISTICS AND ANALYSIS OF CHANNELED SUBSTRATE NARROW STRIPE GAAS/GAALAS LASERSCURTIS JP; PLUMB RG; GOODWIN AR et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 5; PP. 3444-3449; BIBL. 9 REF.Article

FORWARD BIAS VOLTAGE CHARACTERISTICS FOR (GAAL)AS AND (GAIN)(ASP) LASERSTHOMAS B; KAR A; HENSHALL GD et al.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 6; PP. 312-315; BIBL. 5 REF.Article

MOVPE GROWTH OF GA_1-XAL_XAS-GAAS QUANTUM WELL HETEROSTRUCTURESFRIJLINK PM; MALUENDA J.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 9; PART. 2; PP. L574-L576; BIBL. 4 REF.Article

TEMPERATURE DEPENDENCE OF INGAASP DOUBLE-HETEROSTRUCTURE LASER CHARACTERISTICSNAHURY RE; POLLOCK MA; DE WINTER JC et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 21; PP. 695-696; BIBL. 12 REF.Article

GA_0.47IN_0.53AS/AL_0.48IN_0.52AS MULTIQUANTUM-WELL LEDS EMITTING AT 1.6 MU MALAVI K; PEARSALL TP; FORREST SR et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 6; PP. 227-229; BIBL. 11 REF.Article

AN ANALYTICAL SOLUTION OF THE LATERAL CURRENT SPEADING AND DIFFUSION PROBLEM IN NARROW OXIDE STRIPE (GAAL)AS/GAAS DH LASERSLENGYEL G; MEISSNER P; PATZAK E et al.1982; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1982; VOL. 30; NO 4; PP. 464-471; BIBL. 25 REF.Article

LUMINESCENCE PROPERTIES OF GAAS-GA_1-XAL_XAS DOUBLE HETEROSTRUCTURES AND MULTIQUANTUM-WELL SUPERLATTICES GROWN BY MOLECULAR BEAM EPITAXYPETROFF PM; WEISBUCH C; DINGLE R et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 12; PP. 965-967; BIBL. 14 REF.Article

MAGNETOSTATIC FIELD EFFECT ON THRESHOLD CURRENT IN A GAAS/AL Y GA_1-YAS DOUBLE-HETEROSTRUCTURE LASERHSIEH HC; LEE GY.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 7; PP. 4414-4417; BIBL. 16 REF.Article

MOBILITY ENHANCEMENT IN INVERTED AL_XGA_1-XAS/GAAS MODULATION DOPED STRUCTURES AND ITS DEPENDENCE ON DONOR-ELECTRON SEPARATIONMORKOC H; DRUMMOND TJ; THORNE RE et al.1981; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 12; PP. L913-L916; BIBL. 14 REF.Article

HETEROJONCTIONS GA_1-XAL_XAS/GAAS REALISES PAR EPITAXIE LIQUIDE AVEC ENTRAINEMENT CONTROLE DE SOLUTION: CROISSANCE ET CARACTERISATIONBENOIT JACQUES.1979; ; FRA; DA. 1979; DGRST/77 7 1001; 27 P.; 30 CM; BIBL. 11 REF.; ACTION CONCERTEE: COMPOSANTS ET CIRCUITS MICROMINIATURISESReport

IMPURITY PHOTOLUMINESCENCE IN GAAS/GA_1-XAL_XAS MULTIPLE QUANTUM WELLSLAMBERT B; DEVEAUD B; REGRENY A et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 43; NO 6; PP. 443-446; BIBL. 10 REF.Article

NUMERICAL SIMULATION OF GAAS/GAALAS HETEROJUNCTION BIPOLAR TRANSISTORSASBECK PM; MILLER DL; ASATOURIAN R et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 12; PP. 403-406; BIBL. 9 REF.Article

HIGH-SPEED GAALAS-GAAS HETERO-JUNCTION BIPOLAR TRANSISTORS WITH NEAR-BALLISTIC OPERATIONANKRI D; SCHAFF WJ; SMITH P et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 4; PP. 147-149; BIBL. 6 REF.Article

TUNNELLING THROUGH GAAS-AL_XGA_1-XAS-GAAS DOUBLE HETEROJUNCTIONSDELAGEBEAUDEUF D; DELESCLUSE P; ETIENNE P et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 2; PP. 85-87; BIBL. 9 REF.Article

DIRECT MODULATION OF INGA ASP/INP DOUBLE HETEROSTRUCTURE LASERS.AKIBA S; SAKAI K; YAMAMOTO T et al.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 6; PP. 197-198; BIBL. 9 REF.Article

SPATIALLY RESOLVED PHOTOLUMINESCENCE CHARACTERIZATION AND OPTICALLY INDUCED DEGRADATION OF IN_1-XGA_XAS_YP_1-Y DH LASER MATERIALJOHNSTON WD JR; EPPS GY; NAHORY RE et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 12; PP. 992-994; BIBL. 9 REF.Article

THE CHANNELING AVALANCHE PHOTODIODE: A NOVEL ULTRA-LOW-NOISE INTERDIGITATED P-N JUNCTION DETECTORCAPASSO F.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 9; PP. 1388-1395; BIBL. 29 REF.Article

INCORPORATION RATES OF GALLIUM AND ALUMINUM ON GAAS DURING MOLECULAR BEAM EPITAXY AT HIGH SUBSTRATE TEMPERATURESFISCHER R; KLEM J; DRUMMOND TJ et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2508-2510; BIBL. 7 REF.Article